The signal booster, built around
a few transistors and support components, offers an RF gain of about 12 to 18dB (from
about 100kHz to over 30 MHz).
The RF signal is direct-coupled from Q1's source terminal to the base of Q2, which is
configured as a voltage amplifier. The output of Q2 is then direct-coupled to the base of
Q3 (configured as an emitter- follower amplifier). Transistor Q3 is used to match and
isolate the gain stage from receiver's RF-input circuitry.
Inductor L1 is used to keep any power source noise from reaching the FET(Q1) and any value
of RF choke 0.5 to 2.5 mH will do. The value of R2 sets the Q2 bias at about 2V. If the
voltage is less than 2V, increase the value of R2 to 1.5k ohm. To go below 100kHz (to
bottom of the RF spectrum), increase the value of C1 to 0.002uF. The antenna is short
pull-up type (42" to 86" long). |